Zetex Semiconductor FCX591 Datasheet
SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
PARTMARKING DETAIL - P1
COMPLEMENTARY TYPE - FCX491
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Collector -Emitter Cut-Off
Current
Emitter Cut-Off Current I
Saturation Voltages V
Base-Emitter Turn-on Voltage V
Static Forward Current Transfer
Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
For typical Characteristics graphs see FMMT591 datasheet
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CES
EBO
CE(sat)
V
BE(sat)
BE(on)
h
FE
T
obo
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
amb
-80 V
-60 V IC=-10mA, IB=0*
-5 V
-100 nA VCB=-60V
-100 nA V
-100 nA VEB=-4V, IC=0
-0.3
-0.6VV
-1.2 V IC=-1A, IB=-100mA*
-1.0 V IC=-1A, VCE=-5V*
100
100
300
80
15
150 MHz IC=-50mA, VCE=-10V
10 pF VCB=-10V, f=1MHz
µs. Duty cycle ≤ 2%
3 - 92
FCX591
C
C
B
-80 V
-60 V
-5 V
-2 A
-1 A
-200 mA
1W
-65 to +150 °C
=-100µA, I
I
C
=-100µA, I
I
E
=-60V
CES
IC=-500mA,
=-50mA*
I
B
I
=-1A, IB=-100mA*
C
I
=-1mA, VCE=-5V*
C
=-500mA, VCE=-5V*
I
C
I
=-1A, VCE=-5V*
C
=-2A, VCE=-5V*
I
C
f=100MHz
=0
E
=0
C
E
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