Zetex Semiconductor FCX558 Datasheet
SOT89 PNP SILICON PLANAR
E
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – MARCH 1996
FEATURES
* 400 Volt V
*P
tot
COMPLEMENTARY TYPE – FCX458
CEO
= 1 Watt
FCX558
C
PARTMARKING DETAIL – P58
ABSOLUTE MAXIMUM RATINGS.
B
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
CM
tot
j:Tstg
= 25°C).
-400 V
-400 V
-5 V
-200 mA
-500 mA
1W
-65 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
Switching times t
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
on
t
off
-400 V
I
=-100µA
C
-400 V IC=-10mA*
-5 V
;I
CES
-100 nA VCB=-320V; V
=-100µA
I
E
-100 nA VEB=-4V
-0.2
-0.5
V
V
IC=-20mA, IB=-2mA*
I
=-50mA, IB=-6mA*
C
-0.9 V IC=-50mA, IB=-5mA*
-0.9 V IC=-50mA, VCE=-10V*
100
100
15
300
IC=-1mA, VCE=-10V
I
=-50mA, VCE=-10V*
C
I
=-100mA, VCE=-10V*
C
50 MHz IC=-10mA, VCE=-20V
f=20MHz
5pFV
95 Typical
1600 Typicalnsns
=-20V, f=1MHz
CB
IC=-50mA, VC=-100V
I
=-5mA, IB2=-10mA
B1
For typical characteristics graphs see FZT558 datasheet.
3 - 90
C
CES
= 320V
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