Zetex Semiconductor FCX495 Datasheet

SOT89 NPN SILICON PLANAR

C

B

E

HIGH VOLTAGE TRANSISTOR

ISSUE 3 OCTOBER 1995 ✪

FEATURES
* 150 Volt V
* 1 Amp continuous current

PARTMARKING DETAIL – N95

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V

Collector Cut-Off
Currents

Emitter Cut-Off Current I
Emitter Saturation

Voltages

Base-Emitter
Turn On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Collector-Base
Breakdown Voltage

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT495 Datasheet

CEO

=25°C P

amb

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

, I

CES

170 V
150 V IC=10mA*
5V

100
100
50
10

T

C

obo

100 MHz IC=50mA, VCE=10V

CBO
CEO

EBO
C
CM
B

tot

-65 to +150 °C

amb

j:Tstg

= 25°C).

100 nA VCB=150V, VCE=150V

100 nA VEB=4V

0.2

0.3

V
V

1.0 V IC=500mA, IB=50mA*

1.0 V IC=500mA, VCE=10V*

300

10 pF VCB=10V, f=1MHz

FCX495

170 V
150 V

5V
1A
2A

200 mA

1W

I

=100µA

C

I

=100µA

E

IC=250mA, IB=25mA*
I

=500mA, IB=50mA*

C

IC=1mA, VCE=10V
I

=250mA, VCE=10V*

C

I

=500mA, VCE=10V*

C

I

=1A, VCE=10V*

C

f=100MHz

C

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