Zetex Semiconductor FCX493 Datasheet

SOT89 NPN SILICON PLANAR

C

E

MEDIUM POWER TRANSISTOR

ISSUE 3 - NOVEMBER 1995 ✪

COMPLEMENTARY TYPE – FCX593

PARTMARKING DETAIL – N93

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERI STIC S (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V

Collector Cut-Off Currents I

Emitter Cut-Off Current I
Collector-Emitter

Saturation Voltage
Base-Emitter

Saturation Voltage
Base-Emitter

Turn On Voltage
Static Forward Current

Transfer Ratio

Transition Frequency f

Collector-Base
Breakdown Voltage

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT493 datasheet.

(BR)CBO

V

CEO(sus)

V

(BR)EBO

CBO

I

CES
EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

C

obo

CBO
CEO

EBO
C
CM
B

tot

-65 to +150 °C

amb

j:Tstg

= 25°C).

120 V
100 V IC=10mA*
5V

100 nA VCB=100V
100 nA V
100 nA VEB=4V

0.3

0.6

V
V

1.15 V IC=1A, IB=100mA

1.0 V IC=1A, VCE=10V

100
100

300
60
20

150 MHz IC=50mA, VCE=10V

10 pF VCB=10V, f=1MHz

FCX493

B

120 V
100 V

5V
1A
2A

200 mA

1W

=100µA

I

C

=100µA

I

E

=100V

CES

IC=500mA, IB=50mA
I

=1A, IB=100mA

C

IC=1mA, VCE=10V*
I

=250mA, VCE=10V*

C

I

=500mA, VCE=10V*

C

I

=1A, VCE=10V*

C

f=100MHz

C

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