Zetex Semiconductor FCX491A Datasheet

SOT89 NPN SILICON PLANAR

C

E

MEDIUM POWER TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES
* 1 Amp continuous current

COMPLEMENTARY TYPE- FCX591A
PARTMARKING DETAILS - N2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Curren t I
Power Dissipation P
Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

C
CM

amb

CBO
CEO
EBO

TOT
j:Tstg

= 25°C ).

-65 to +150 °C

FCX491A

C

B

40 V
40 V

5V
1A
2A
1W

Breakdown Voltages V

Collector Cut-Off Currents I

Emitter Cut-Off Current I
Emitter Saturation Voltages V

Base-Emitter
Turn-On Voltage

Static Forw ard Cu rre nt
Transfer

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO,

I

CES
EBO

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

40 V
40 V IC=10mA*
5V

100 nA VCB=30V,
100 nA VCE=30V
100

0.3

0.5VV

1.1 V IC=1A, IB=100mA*

1.0 V IC=1A, VCE=5V*

300
300

900
200
35

Transitional Frequency f

Collector-Base Breakdown
Voltage

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical Characteristics graphs see FMMT491A datasheet

T

C

obo

150 MHz IC=50mA, VCE=10V

10 pF VCB=10V f=1MHz

3 - 87

I

=100µA

C

I

=100µA

E

VEB=4V

nA

IC=500mA, IB=50mA*
I

=1A, IB=100mA*

C

IC=1mA, VCE=5V
I

=500mA, VCE=5V*

C

I

=1A, VCE=5V*

C

I

=2A, VCE=5V*

C

f=100MHz