Zetex Semiconductor FCX491 Datasheet
SOT89 NPN SILICON PLANAR
C
E
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995 ✪
FEATURES
* 60 Volt V
* 1 Amp continuous current
*P
COMPLEMENTARY TYPE – FCX591
PARTMARKING DETAIL – N1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Currents I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT491 datasheet
= 1 Watt
tot
CEO
=25°C P
amb
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
I
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
CBO
CEO
EBO
C
CM
tot
-65 to +150 °C
amb
j:Tstg
= 25°C).
80 V
60 V IC=10mA*
5V
100 nA VCB=60V,
100 nA VCE=60V
100 nA VEB=4V
0.25
0.50
V
V
1.1 V IC=1A, IB=100mA*
1.0 V IC=1A, VCE=5V*
100
100
300
80
30
150 MHz IC=50mA, VCE=10V
10 pF VCB=10V, f=1MHz
FCX491
B
80 V
60 V
5V
1A
2A
1W
I
=100µA
C
=100µA
I
E
IC=500mA, IB=50mA*
I
=1A, IB=100mA*
C
IC=1mA, VCE=5V
I
=500mA, VCE=5V*
C
I
=1A, VCE=5V*
C
I
=2A, VCE=5V*
C
f=100MHz
C
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