Zetex Semiconductor FCX1053A Datasheet

SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR

ISSUE 1 - MARCH 1999
FEATURES

* 2W POWER DISSIPATION

* 10A Peak Pulse Current
* Excellent HFE Characteristics up to 10 Amps
* Extremely Low Saturation Voltage E.g. 21mv Typ.
* Extremely Low Equivalent On-resistance;

R

Partmarking Detail - 053

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current ** I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.
**Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.

CE(sat)

78mat 4.5A

CBO

CEO

EBO

CM

C

=25°C P

amb

calculated using FR4 measuring 15x15x0.6mm

tot

tot

j:Tstg



s. Duty cycle  2%

FCX1053A

C

C

B

150 V

75 V

5V

10 A

3A

1 †
2 ‡

-55 to +150 °C

W
W

E

FCX1053A

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer Ratio

V

(BR)CBO

V

CES

V

CEO

V

CEV

V

(BR)EBO

CBO

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

150 250 V

150 250 V

75 100 V IC=10mA

150 250 V

58.8 V

0.9 10 nA VCB=120V

0.3 10 nA VEB=4V

1.5 10 nA V

21
55
150
160
350

30
75
200
210
440

900 1000 mV IC=3A, IB=100mA*

825 950 mV IC=3A, VCE=2V*

270
300
300
40

440
450
450
60

1200

20

Switching Times t

Transition Frequency f

Output Capacitance C

on

t

off

T

obo

*Measured under pulsed conditions. Pulse width=300

162 ns

900 ns

140 MHz IC=50mA, VCE=10V

21 30 pF VCB=10V, f=1MHz



s. Duty cycle  2%

UNIT

mV
mV
mV
mV
mV

CONDITIONS.

=100A

I

C

=100A

I

C

=100A, VEB=1V

I

C

=100A

I

E

=120V

CES

IC=0.2A, IB=20mA*
I

=0.5A, IB=20mA*

C

I

=1A, IB=10mA*

C

I

=2A, IB=100mA*

C

I

=4.5A, IB=200mA*

C

IC=10mA, VCE=2V*
I

=0.5A, VCE=2V*

C

I

=1A, VCE=2V*

C

I

=4.5A, VCE=2V*

C

=10A, VCE=2V*

I

C

=2A, IB1=IB2=20mA,

I

C

V

=50V

CC

=2A, IB1=IB2=20mA,

I

C

V

=50V

CC

f=100MHz