Zetex Semiconductor BST52 Datasheet
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – JANUARY 1996
FEATURES
* Fast Switching
* High h
FE
BST52
C
PARTMAKING DETAIL — AS3
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Pea Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Emitter Cut-Off Current I
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Turn On Time t
Turn Off Time t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
h
FE
on
off
90 V
80 V IC=10mA, IB=0*
10 V
10
10
1.3
1.3
µA
µA
V
V
1.9 V IC=500mA, IB=0.5mA
1K
2K
400 Typical ns IC=500mA
1.5K Typical ns
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT614 datasheet.
90 V
80 V
10 V
1.5 A
500 mA
100 mA
1W
-65 to +150 °C
I
=10µA, IE=0
C
I
=10µA, IC=0
E
VEB=8V, IE=0
VCE=80V, IC=0
IC=500mA, IB=0.5mA
I
=500mA, IB=0.5mA
C
T
=150°C
j
IC=150mA, VCE=10V*
I
=-500mA, VCE=-10V*
C
I
=0.5mA
Bon=IBoff
E
C
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