SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996 ✪
FEATURES
* High V
* Low saturation voltage
COMPLEMENTARY TYPE – BST39
PARTMARKING DETAIL – BT2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse C urren t I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature
Range
CEO
=25°C P
amb
CM
C
T
CBO
CEO
EBO
tot
j:Tstg
-65 to +150 °C
BST16
C
C
B
SOT89
-350 V
-300 V
-4 V
-1 A
-500 mA
1W
E
ELECTRICAL CHARACTERI STIC S (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. U NIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
EBO
V
CE(sat)
h
FE
T
obo
-350 V
I
=-100µA
C
-300 V IC=-1mA
-4 V
-1
-50
-20
- 2.0
-0.5VV
µA
µA
µA
I
=-100µA
E
VCB=-280V
VCB=-250V
VEB=-4V
IC=-50mA, IB=-5mA*
I
=-30mA, IB=-3mA*
C
30 150 IC=-50mA, VCE=-10V*
15 MHz IC=-10mA, VCE=-10V*
f = 30MHz
15 pF VCB=-10V, f=1MHz
3 - 76
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