Zetex Semiconductor BSS138 Datasheet
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996 ✪
PARTMARKING DETAIL – SS
BSS138
D
S
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERI STIC S (at T
amb
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
50 V
200 mA
800 mA
± 20
360 mW
-55 to +150 °C
V
PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GSS
I
DSS
R
g
C
C
d(on)
r
d(off)
f
DSS
GS(th)
DS(on)
fs
iss
oss
rss
50 V ID=0.25mA, VGS=0V
0.5 1.5 V ID=1mA, VDS= V
100 nA
0.5
5
100
3.5
V
VDS=50V, VGS=0
µA
V
µA
VDS=20V, VGS=0
nA
VGS=5V,ID=200mA
Ω
=± 20V, VDS=0V
GS
=50V, VGS=0V, T=125°C(2)
DS
GS
120 mS VDS=25V,ID=200mA
50 pF
25 pF
V
=25V, VGS=0V, f=1MHz
DS
8pF
10 ns
10 ns
15 ns
V
≈30V, ID=280mA
DD
25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 72
TYPICAL CHARACTERISTICS
1.0
VGS =10V 5V 4.5V
0.8
0.6
0.4
0.2
-Drain Source Current (A)
DS
I
0
012345
VDS -Drain Source Voltage (Volts)
80µs Pulsed Test
Saturation Characteristics
BSS138 BSS138
3V 3. 5V
100
4V
3.5V
3V
10
Drain Source
2.5V
2V
DS(on) -
R
On Resistance (Ohms)
1.0
0.01
ID-Drain Current (Amperes)
Typical On Resistance vs.
Drain Current
VGS =2.5V
0.1
4V
5V
7V
10V
1.0
500
400
300
200
100
0
-Forward Transconductance (mS)
0 0.2 0.4 0.6 0.8 1.0 0 2 4
fs
g
ID-Drain Current (Amperes)
VDS =25V
80µs Pulsed Test
500
400
300
200
100
0
-Forward Transconductance (mS)
fs
g
Typical Transconductance vs.
Drain Current
100
C
Crss
10
C-Capacitance (pF)
1
Coss
iss
1 10 1000.1
NOTE:-VGS =0V
F=1MHz
C
iss
Coss
Crss
VDS -Drain Source Voltage (Volts)
1.8
GS(th)
1.6
And V
1.4
1.2
DS(on)
1.0
0.8
0.6
Normalised R
Typical Capacitance vs.
Drain - Source Voltage
VDS =25V
80µs Pulsed Test
6810
VGS -Gate Source Voltage (Volts)
Typical Transconductance vs.
Gate - Source Voltage
RDS(on) AT
VGS =5V
ID=200mA
V
GS(th) AT
I
D=1mA
DS=VGS
V
-40 40 80 120 160
0
T-Temperature ( °C)
Normalised R
DS(on)
0
And V
GS(th)
vs. Temperature
3 - 73 3 - 74
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