Zetex Semiconductor BSS123A Datasheet
SOT23 N-CHANNEL ENHANCEMENT
D
MODE VERTICAL DMOS FET
ISSUE 4 – APRIL 1998
FEATURES
*BV
* Low Threshold
DSS
= 100V
BSS123A
S
PARTMARKING DETAIL – SAA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Drain-Gate Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
DS
DGR
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GS(th)
GSS
I
DSS
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
100 V ID=0.25mA, VGS=0V
DSS
0.5 2.0 V ID=1mA, VDS= V
50 nA
500 nA VDS=100V, VGS=0V
6
Ω
10
Ω
80 mS VDS=25V, ID=100mA
25 pF
9pF
4pF
10 ns
10 ns
15 ns
25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
100 V
100 V
170 mA
680 mA
± 20
360 mW
-55 to +150 °C
V
=± 20V, VDS=0V
GS
VGS=10V, ID=170mA
V
=4.5V, ID=170mA
GS
V
=25V, VGS=0V, f=1MHz
DS
V
≈30V, ID=280mA
DD
G
V
GS
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