Zetex Semiconductor BSS123 Datasheet
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996 ✪
PARTMARKING DETAIL – SA
BSS123
D
S
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Drain-Gate Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Peak Gate-Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
DS
DGR
D
DM
GS
GSM
tot
j:Tstg
= 25°C unless otherwise stated).
100 V
100 V
170 mA
680 mA
± 20
± 20
360 mW
-55 to +150 °C
V
V
PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GSS
I
DSS
R
g
C
C
d(on)
r
d(off)
f
DSS
GS(th)
DS(on)
fs
iss
oss
rss
100 V ID=0.25mA, VGS=0V
0.8 2.2 2.8 V ID=1mA, VDS= V
10 50 nA
1
15
2
60
10
56
V
GS
V
µA
µA
nA
Ω
DS
V
DS
VDS=20V, VGS=0V
VGS=10V, ID=100mA
=± 20V, V
=100V, VGS=0V
=100V, VGS=0V, T=125°C(2)
GS
=0V
DS
80 120 mS VDS=25V, ID=100mA
20 pF
9pF
V
=25V, VGS=0V, f=1MHz
DS
4pF
10 ns
10 ns
15 ns
V
≈30V, I
DD
=280mA
D
25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
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