Zetex Semiconductor BSP42 Datasheet
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001 ✪
COMPLEMENTARY TYPE – BSP32
BSP42
C
PARTMARKING DETAIL – BSP42
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
90 V
80 V IC=10mA
5V
100
50
0.25
0.5
1.0
1.2
nA
µA
V
V
V
V
10
40
120
30
Output Capacitance C
Input Capacitance C
Transition Frequency f
Turn-On Time T
Turn-Off Time T
T
obo
ibo
100 MHz IC=50mA, VCE=10V
on
off
12 pF VCB =10V, f =1MHz
90 pF VEB =0.5V, f=1MHz
250 ns VCC =20V, IC =100mA
1000 ns
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
90 V
80 V
5V
2A
1A
100 mA
2W
-55 to +150 °C
I
=100µA
C
=10µA
I
E
=60V
V
CB
V
=60V, T
CB
amb
=125°C
IC =150mA, IB=15mA
I
=500mA, IB=50mA
C
IC =150mA, IB=15mA
I
=500mA, IB=50mA
C
I
=100µA, VCE=5V
C
I
=100mA, VCE=5V
C
I
=500mA, VCE=5V
C
f =35MHz
I
=-IB2 =-5mA
B1
E
C
TBA
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