Zetex Semiconductor BSP33 Datasheet
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
BSP33
COMPLEMENTARY TYPE – BSP43
C
PARTMARKING DETAIL – BSP33
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
TOT
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
V
CE(sat)
V
BE(sat)
h
FE
-90 V
-80 V IC=-10mA
-5 V
-100
-50
-0.25
-0.5
-1.0
-1.2
nA
µA
V
V
V
V
30
100
300
50
Output Capacitance C
Input Capacitance C
Transition Frequency f
Turn-On Time T
Turn-Off Time T
T
obo
ibo
100 MHz IC=-50mA, VCE=-10V
on
off
20 pF VCB =-10V, f =1MHz
120 pF VEB =-0.5V, f =1MHz
500 ns V
650 ns
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
-90 V
-80 V
-5 V
-2 A
-1 A
2W
-55 to +150 °C
=-100µA
I
C
I
=-10µA
E
V
=-60V
CB
V
=-60V, T
CB
amb
=125°C
IC =-150mA, IB=-15mA
I
=-500mA, IB=-50mA
C
IC=-150mA, IB=-15mA
I
=-500mA, IB=-50mA
C
=-100µA, V
I
C
I
=-100mA, VCE =-5V
C
I
=-500mA, VCE =-5V
C
CE
=-5V
f =35MHz
=-20V, IC =-100mA
CC
I
=-IB2 =-5mA
B1
E
C
TBA
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