Zetex Semiconductor BSP16 Datasheet
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 AUGUST 1995
FEATURES
*High V
* Low saturation voltage
CEO
BSP16
C
COMPLEMENTARY TYPE: BSP19
PARTMARKING DETAIL: BSP16
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
h
FE
T
obo
*Measured under pulsed conditions. Pulse width=300
-350 V
-300 V IC=-10mA
-5 V
-1
-20
- 2.0
-0.5
µA
µA
V
V
30 120 IC=-50mA, VCE=-10V*
15 MHz IC=-10mA, VCE=-10V*
15 pF VCB=-10V, f=1MHz
µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
-350 V
-300 V
-6 V
-1 A
-0.5 A
2W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
=-280V
V
CB
V
=-6V
EB
IC=-50mA, IB=-5mA*
I
=-30mA, IB=-3mA*
C
f = 30MHz
E
C
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