Zetex Semiconductor BFS17L, BFS17H Datasheet
SOT23 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 4 – MARCH 2001
BFS17L
BFS17H
PARTMARKING DETAILS — BFS17L - E1L
C
BFS17H - E1H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
I
CBO
h
10
10
FE
nA
µA
BFS17L 25 100 IC=2.0mA, VCE=1.0V
BFS17H 70 200 I
20 125 I
Transition
f
Frequency
Feedback Capacitance -C
Output Capacitance C
Input Capacitance C
T
obo
ibo
1.0
1.3
re
0.85 pF IC=2.0mA, VCE=5V, f=1MHz
1.5 pF VCB=10V, f=1MHz
2.0 pF VEB=0.5V, f=1MHz
GHz
GHz
Noise Figure N 4.5 dB I
Intermodulation
Distortion
d
im
-45 dB IC=10mA, VCE=6.0V
25 V
15 V
2.5 V
50 mA
25 mA
330 mW
-55 to +150 °C
=10V, IE=0
V
CB
V
=10V, IE=0,
CB
= 100°C
T
amb
=2.0mA, VCE=1.0V
C
=25mA, VCE=1.0V
C
IC=2.0mA, VCE=5.0V
f=500MHz
I
=25mA, VCE=5.0V
C
f=500MHz
=2.0mA, VCE=5.0V
C
R
=50Ω, f=500MHz
S
=37.5Ω,T
R
L
V
=100mV at fp=183MHz
o
V
=100mV at fq=200MHz
o
measured at f
amb
(2q-p)
=25°C
=217MHz
E
B
Spice parameter data is available upon request for this device
TBA
BFS17L
BFS17H
3
2
- (GHz)
T
f
1
0
110
Collector Current (mA)
IC -
TYPICAL CHARACTERISTICS
n
1000
i
Ga
ised
l
- Norma
E
F
h
f=400MHz
f
T
VCE=10V
VCE=5V
1000.1
v IC
80
60
40
20
1
µ
10µ
IC - Collector Current (A)
VCE=10V
100
µ
hFEv IC
100m
10m
1m
10
f=1MHz
20
V
CE
- (V)
30
2.0
)
F
p
1.5
(
-
E
R
1.0
C
0.5
0
CREv VCE
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