SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – MARCH 2001 ✪
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BF720
PARTMARKING DETAILS:- BF721
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
=150°C
†T
amb
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA92 datasheet.
BF721 V
BF721 V
(BR)CBO
(BR)CEO
V
(BR)EBO
CBO
I
CER
EBO
V
CE(sat)
V
BE(sat)
h
FE
T
obo
-300 V
-300 V IC=-1mA, IB=0*
-5 V
-50 IC=-25mA, VCE=-20V*
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
-55 to +150 °C
-10 nA VCB=-200V, IE=0 †
-50
-10
-10
nA
µA
µA
-0.6 V IC=-30mA, IB=-5mA*
-0.9 V IC=-20mA, IB=-2mA*
100 MHz IC=-10mA, VCE=-10V
0.8 pF VCB=-30V, f=1MHz
BF721
C
B
-300 V
-300 V
-5 V
-100 mA
-50 mA
-2 W
=-10µA, IE=0
I
C
I
=-100µA, IC=0
E
=-200V, RBE=2.7KΩ
V
CE
VCE=-200V, RBE=2.7KΩ †
V
=-5V, IC=0
EB
f=100MHz
E
C
TBA