Zetex Semiconductor BF621 Datasheet
SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – MARCH 2001 ✪
FEATURES
* High breakdown and low saturation voltage
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE – BF620
PARTMARKING DETAIL – DF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Colector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage V
Static Forward
Current Transfer Ratio
Transition Frequency f
Output Capacitance C
=150°C
†T
amb
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA92 datasheet.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
CER
EBO
V
CE(sat)
BE(sat)
h
FE
T
obo
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
-300 V
-300 V IC=-1mA, IB=0*
-5 V
-10
-20
-50
-10
-10
-0.6 V IC=-30mA, IB=-5mA*
-0.9 V IC=-20mA, IB=-2mA*
50 IC=-25mA, VCE=-20V*
100 Typical MHz IC=-10mA, VCE=-10V
0.8 Typical pF VCB=-30V, f=1MHz
nA
µA
nA
µA
µA
BF621
C
C
B
SOT89
-300 V
-300 V
-5 V
-100 mA
-50 mA
-1 W
-65 to +150 °C
=-10µA, IE=0
I
C
I
=-100µA, IC=0
E
V
=-200V, IE=0
CB
V
=-200V, IE=0 †
CB
=-200V, RBE=2.7KΩ
V
CE
VCE=-200V, RBE=2.7KΩ †
=-5V, IC=0
V
EB
f=100MHz
E
TBA
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