Zetex Semiconductor BCX68-25, BCX68-16, BCX68 Datasheet

SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 2 – FEBRUARY 1995 ✪

FEATURES
* High gain and low saturation voltages

COMPLEMENTARY TYPE – BCX69

BCX68

C

PARTMARKING DETAIL – BCX68 – CE

BCX68-16 – CC
BCX68-25 – CD

C

B

SOT89

ABSOLUTE MAXIMUM RATINGS.

PA RAM ETE R SY MBO L VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTER ISTI CS (at T

CBO
CEO

EBO
CM
C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base

Breakdown voltage
Collector-Emitter

Breakdown Voltage
Emitter-Base

Breakdown Voltage
Collector Cut-Off

Current
Emitter Cut-Off Current I
Collector-Emitter

Saturation Voltage
Base-Emitter Turn-On

Voltage
Static Forward Current

Transfer Ratio

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

V

CE(sat)

V

BE(on)

h

FE

25 V

20 V IC =10mA

5V

0.1

µA

10

µA

10

µA

0.5 V IC =1A, IB =100mA*

1.0 V IC =1A, VCE =1V*

50
85

375

60
BCX68-16
BCX68-25

Transition Frequency f

Output Capacitance C

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT449 datasheet.

T

obo

100

160 250

250
400

100 MHz IC =100mA, VCE =5V,

25 pF VCB =10V, f=1MHz

25 V
20 V

5V
2A
1A
1W

-65 to +150 °C

=100µA

I

C

I

=100µA

E

VCB =25V
V

=25V, Ta =150°C

CB

VEB =5V

=5mA, VCE =10V

I

C

I

=500mA, VCE =1V

C

I

=1A, VCE =1V*

C

I

=500mA, VCE =1V*

C

I

=500mA, VCE =1V

C

f=100MHz

E

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