Zetex Semiconductor BCX5616 Datasheet
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
COMPLEMENTARY TYPE – BCX5316
BCX5616
C
PARTMARKING DETAIL – BL
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
100 V
80 V IC =10mA
5V
0.1
µA
20
µA
20 nA VEB =4V
0.5 V IC =500mA, IB =50mA*
1.0 V IC =500mA, VCE =2V*
25
100
250
25
Transition Frequency f
Output Capacitance C
T
obo
150 MHz IC =50mA, VCE =10V,
15 pF VCB =10V, f=1MHz
*Measured under pulsed conditions.
100 V
80 V
5V
2A
1A
1W
-65 to +150 °C
µA
IC =100
I
=10µA
E
V
=30V
CB
V
=30V, T
CB
amb
=150°C
IC =5mA, VCE =2V*
I
=150mA, VCE =2V*
C
=500mA, VCE =2V*
I
C
f=100MHz
E
TBA
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