Zetex Semiconductor BCX5316 Datasheet
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
COMPLIMENTARY TYPE – BCX5616
BCX5316
C
PARTMARKING DETAIL – AL
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
-100 V
-80 V IC =-10mA
-5 V
-0.1
µA
-20
µA
-10
µA
-0.5 V IC =-500mA, IB =-50mA*
-1.0 V IC =-500mA, VCE =-2V*
25
100
250
25
Transition Frequency f
Output Capacitance C
T
obo
150 MHz IC =-50mA, VCE =-10V,
25 pF VCB =-10V, f=1MHz
*Measured under pulsed conditions.
-100 V
-80 V
-5 V
-1.5 A
-1 A
1W
-65 to +150 °C
=-10µA
E
=-30V
CB
=-30V, T
CB
=-4V
EB
µA
amb
=150°C
IC =-100
I
V
V
V
IC =-5mA, VCE =-2V*
I
=-150mA, VCE =-2V*
C
=-500mA, VCE =-2V*
I
C
f=100MHz
E
TBA
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