Zetex Semiconductor BCX19, BCX19R Datasheet

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS – BCX19 - U1

BCX19R - U4

COMPLEMENTARY TYPES - BCX17

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Peak Base Current I
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

CES

CEO

EBO

CM

C

B

BM

TOT

j:Tstg

= 25°C unless otherwise stated).

BCX19

C

B

SOT23

50 V
45 V

5V

1000 mA

500 mA
100 mA
200 mA
330 mW

-55 to +150 °C

E

Collector-Base Cut-Off
Current

Emitter-Base Cut-Off
Current

Base-Emitter Voltage V

Collector-Emitter
Saturation Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

I

CBO

I

EBO

BE

V

CE(sat)

h

FE

T

obo

*Measured under pulsed conditions.

100

nA

V

200

10

µA

µA

CB

V

CB

V

EB

1.2 V IC =500mA, VCE =1V*

620 mV IC =500mA, IB =50mA*

100
70
40

600

=100mA, VCE =1V

I

C

I

=300mA, VCE =1V*

C

=500mA, VCE =1V*

I

C

200 MHz IC =10mA, VCE =5V

f =35MHz

5.0 pF VCB =10V, f =1MHz

TBA

=20V

=20V, Tj=150°C

=5V