Zetex Semiconductor BCX17R, BCX17 Datasheet
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
BCX17
PARTMARKING DETAILS – BCX17 – T1
BCX17R – T4
C
COMPLIMENTARY TYPES - BCX19
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
Collector-Emitter Voltage (I
=-10mA) V
C
Emitter-Base Voltage V
Collector Current I
Peak Collector Current I
Peak Emitter Current I
Base Current I
Peak Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CES
CEO
EBO
C
CM
EM
B
BM
tot
j:Tstg
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
Emitter-Base Cut-Off
Current
Base-Emitter Voltage V
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
I
CBO
I
EBO
BE
V
CE(sat)
h
FE
100
70
-100
nA
-200
µA
-10
µA
-1.2 V IC =-500mA, VCE =-1V*
-620 mV IC =-500mA, IB =-50mA*
600
40
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
T
obo
100 MHz IC =-10mA, VCE =-5V
8.0 pF VCB =-10V, f =1MHz
-50 V
-45 V
-5 V
-500 mA
-1000 mA
-1000 mA
-100 mA
-200 mA
330 mW
-55 to +150 °C
I
=0, V
E
=0, V
I
E
I
=0, V
C
=-100mA, VCE =-1V
I
C
I
=-300mA, VCE =-1V*
C
I
=-500mA, VCE =-1V*
C
=-20V
CB
=-20V, Tj=150°C
CB
=-1V
EB
f =35MHz
E
TBA
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