Zetex Semiconductor BCW68HR, BCW68H, BCW68GR, BCW68G, BCW68FR Datasheet
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 - MARCH 2001
PARTMARKING DETAILS –
BCW68
BCW68F – DF BCW68FR – 7T
BCW68G – DG BCW68GR – 5T
C
BCW68H – DH BCW68HR – 7N
COMPLEMENTARY TYPES – BCW66
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current(10ms) I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CES
CEO
EBO
CM
C
B
tot
j:Tstg
-60 V
-45 V
-5 V
-1000 mA
-800 mA
-100 mA
330 mW
-55 to +150 °C
E
B
TBA
BCW68
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage V
Collector-Emitter
Cut-off Current
Emitter-Base Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage V
Static
BCW68F h
Forward
V
(BR)CEO
V
(BR)CES
(BR)EBO
I
CES
EBO
V
CE(sat)
BE(sat)
FE
-45 V I
-60
-5 V
-20
nA
-10
µA
-20 nA V
-0.3 VVI
-0.7
-2 V IC=-500mA,IB=-50mA*
10035170 250 IC=-100mA, VCE =-1V*
Current
Transfer
BCW68G h
BCW68H h
Transition Frequency f
Output Capacitance C
Input Capacitance C
FE
FE
T
obo
ibo
16060250 400 IC=-100mA, VCE =-1V*
250
350 630 IC=-100mA, VCE =-1V*
100
100 MHz IC =-20mA, VCE =-10V
12 18 pF VCB =-10V, f =1MHz
80 pF V
Noise Figure N 2 10 dB I
=-10mA
CEO
IC=-10
µA
I
=-10µA
EBO
=-45V
V
CES
V
=-45V, T
CES
=-4V
EBO
=-100mA, IB = -10mA
C
= -500mA, IB =-50mA*
I
C
I
=-500mA, VCE =-2V*
C
I
=-500mA, VCE =-2V*
C
I
=-500mA, VCE =-2V*
C
f = 100MHz
=-0.5V, f =1MHz
EB
= -0.2mA, VCE =- 5V
C
R
=1KΩ, f=1KH
G
∆f=200Hz
amb
=150°C
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400nsns
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
TBA
IC=-150mA
I
=- IB2 =-15mA
B1
=150Ω
R
L
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