Zetex Semiconductor BCV47, BCV27 Datasheet
SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
BCV27
BCV47
ISSUE 3 SEPTEMBER 1995 ✪
FEATURES
*High V
* Low saturation voltage
COMPLEMENTARY TYPES BCV27 BCV28
CEO
C
BCV47 BCV48
PARTMARKING DETAILS BCV27 ZFF
BCV47 ZFG
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL BCV27 BCV47 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C unless otherwise stated).
amb
40 80 V
30 60 V
10 V
800 mA
500 mA
100 mA
330 mW
-55 to +150 °C
PARAMETER SYMBOL BCV27 BCV47 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
Periodic Sample Test Only. For typical graphs see FMMT38A datasheet
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
T
obo
40 80 V
=100µA
I
C
30 60 V IC=10mA*
10 10 V
100
100
10
10
nA
nA
µA
µA
=10µA
I
E
V
CB
V
CB
V
CB
V
CB
= 30V
= 60V
=30V,T
=60V,T
amb
amb
=150oC
=150oC
100 100 nA VEB=4V
1.0 1.0 V IC=100mA,IB=0.1mA*
1.5 1.5 V IC=100mA,IB=0.1mA*
4K
10K
20K
4K
2K
4K
10K
2K
I
=100µA, V
C
=10mA, VCE=5V*
I
C
I
=100mA, VCE=5V*
C
=500mA, VCE=5V*
I
C
CE
=1V
170 Typical 170 Typical MHz IC=50mA, VCE=5V
f = 20MHz
3.5 Typical 3.5 Typical pF VCB=10V, f=1MHz
µs. Duty cycle ≤2%
3 - 22
E
B
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