Zetex Semiconductor BCV46, BCV26 Datasheet
SOT23 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
BCV26
BCV46
ISSUE 3 SEPTEMBER 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE BCV26 - BCV27
C
BCV46 - BCV47
PARTMARKING DETAILS BCV26 - ZFD
B
BCV46 - ZFE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCV26 BCV46 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL BCV26 BCV46
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-40 -80
-30 -60
-10 -10
-100
-10
Emitter Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for these devices Periodic Sample Test Only.
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
T
obo
-100 -100
-1.0 -1.0
-1.5 -1.5
4K
10K
20K
4K
2K
4K
10K
2K
200 Typical 200 Typical
4.5 Typical 4.5 Typical
µs. Duty cycle ≤2%
-40 -80 V
-30 -60 V
-10 V
-800 mA
-500 mA
-100 mA
330 mW
-55 to +150 °C
CONDITIONS.
UNIT
=100µA
I
V
C
IC=10mA *
V
I
=10µA
V
E
V
-100
-10
nA
nA
µA
µA
nA
V
V
MHz
pF
= -30V
CB
= -60V
V
CB
V
=-30V,T
CB
=-60V,T
V
CB
VEB=-4V
IC=-100mA,IB=-0.1mA*
IC=-100mA,IB=-0.1mA*
I
=-100µΑ, V
C
I
=-10mA, VCE=-5V*
C
=-100mA, VCE=-5V*
I
C
I
=-500mA, VCE=-5V*
C
IC=-50mA, VCE=-5V
f = 20MHz
VCB=-10V, f=1MHz
amb
amb
CE
=150oC
=150oC
=-1V
E
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