Zetex Semiconductor BCV29 Datasheet
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 4 – JANUARY 1996
BCV29
COMPLEMENTARY TYPE – BCV28
C
PARTMARKING DETAIL – EF
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse C urren t I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERI STIC S (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
40 V
30 V IC=10mA*
10 V
10010nA
100 nA VEB=4V
1VI
1.5 V IC=100mA, IB=0.1mA*
4000
10000
20000
4000
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical graphs see FMMT38A datasheet † Periodic Sample Test Only.
Spice parameter data is available upon request for this device
T
obo
150 MHz IC=50mA, VCE=5V
3.5 pF VCB=10V, f=1MHz
3 - 24
40 V
30 V
10 V
800 mA
500 mA
1W
-65 to +150 °C
I
=100µA
C
=10µA
I
E
VCB=30V
µA
=30V, T
CB
=100mA, IB-0.1mA*
C
I
=100µA, VCE=1V†
C
I
=10mA, VCE=5V*
C
I
=100mA, VCE=5V*
C
I
=500mA, VCE=5V*
C
amb
=150°C
V
f = 20MHz
E
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