Zetex Semiconductor BCV28 Datasheet
SOT89 PNP SILICON
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995 ✪
BCV28
COMPLEMENTARY TYPE – BCV29
C
PARTMARKING DETAIL – ED
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse C urren t I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERI STIC S (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
-40 V
-30 V IC=10mA*
-10 V
-100
-10
-100 nA VEB=-4V
-1 V IC=-100mA, IB=-0.1mA*
-1.5 V IC=-100mA, IB=-0.1mA*
4000
10000
20000
4000
Transition Frequency f
Output Capacitance C
T
obo
200 MHz IC=-50mA, VCE=-5V
4.5 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
† Periodic Sample Test Only.
-40 V
-30 V
-10 V
-800 mA
-500 mA
1W
-65 to +150 °C
I
=100µA
C
=10µA
I
E
nA
µA
VCB=-30V
V
=-30V, T
CB
I
=-100µA, VCE=-1V†
C
I
=-10mA, VCE=-5V*
C
I
=-100mA, VCE=-5V*
C
I
=-0.5mA, VCE=-5V*
C
amb
=150°C
f = 20MHz
E
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