Zetex Semiconductor BCP68-25, BCP68 Datasheet
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996 ✪
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
BCP68
C
COMPLEMENTARY TYPE BCP69
PARTMARKING DETAIL BCP68
BCP68 25
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
BCP68
BCP68-25
Transition Frequency f
*Measured under pulsed conditions. Pulse width=300
For typical characteristics graphs see FMMT449 datasheet.
T
25 V
20 V IC= 30mA *
5V
10010nA
10
0.5 V IC=1A, IB=100mA*
0.6
1.0
50
63
160 250
400
400
100 MHz IC=100mA, VCE=5V,
µs. Duty cycle ≤2%
25 V
20 V
5V
2A
1A
2W
-55 to +150 °C
=10µA
I
C
=10µA
I
E
V
=25V
CB
V
µA
µA
V
V
=25V, T
CB
=5V
V
EB
IC=5A, VCE=10V*
=1A, VCE=1V*
I
C
I
=5mA, VCE=10V*
C
I
=500mA, VCE=1V*
C
=500mA, VCE=1V*
I
C
amb
=150°C
f=100MHz
E
C
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