Zetex Semiconductor BCP56-16, BCP56-10, BCP56 Datasheet
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995 ✪
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
BCP56
C
COMPLEMENTARY TYPE BCP53
PARTMARKING DETAILS BCP56
BCP56 10
B
BCP56 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
BCP56-10
BCP56-16
Transition Frequency f
T
*Measured under pulsed conditions. Pulse width=300
100 V
80 V IC= 10mA *
5V
10020nA
10
0.5 V IC=500mA, IB=50mA*
1.0 V IC=500mA, VCE=2V*
40
250
25
63
100
100
160
160
250
125 MHz IC=50mA, VCE=10V,
µs. Duty cycle ≤2%
3 - 18
100 V
80 V
5V
1.5 A
1A
2W
-55 to +150 °C
I
=100µA
C
=10µA
I
E
V
=30V
CB
µA
µA
=30V, T
V
CB
V
=5V
EB
I
=150mA, VCE=2V*
C
=500mA, VCE=2V*
I
C
I
=150mA, VCE=2V*
C
=150mA, VCE=2V*
I
C
amb
=150°C
f=100MHz
E
C
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