Zetex Semiconductor BCP53, BCP53-16, BCP53-10 Datasheet
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995 ✪
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
BCP53
C
COMPLEMENTARY TYPE BCP56
PARTMARKING DETAILS BCP53
BCP53 10
B
BCP53 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
BCP53-10
BCP53-16
Transition Frequency f
T
*Measured under pulsed conditions. Pulse width=300
-100 V
-80 V IC=- 10mA *
-5 V
-100
-20
-10
-0.5 V IC=-500mA, IB=-50mA*
-1.0 V IC=-500mA, VCE=-2V*
40
250
25
63
100
100
160
160
250
125 MHz IC=-50mA, VCE=-10V,
µs. Duty cycle ≤2%
-100 V
-80 V
-5 V
-1.5 A
-1 A
2W
-55 to +150 °C
=-100µA
I
C
=-10µA
I
E
nA
µA
µA
V
=-30V
CB
V
=-30V, T
CB
=-5V
V
EB
I
=-150mA, VCE=-2V*
C
I
=-500mA, VCE=-2V*
C
=-150mA, VCE=-2V*
I
C
=-150mA, VCE=-2V*
I
C
amb
=150°C
f=100MHz
E
C
3 - 15
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