Zetex Semiconductor BC81725, BC81716, BC81740 Datasheet

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 5 – MARCH 2001 ✪

PARTMARKING DETAILS

BC81716 – 6AZ
BC81725 – 6BZ
BC81740 – 6CZ

COMPLEMENTARY TYPE – BC807

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V

CBO

50 V

Collector-Emitter Voltage V

CEO

45 V

Emitter-Base Voltage V

EBO

5V

Peak Pulse Current I

CM

1A

Continuous Collector Current I

C

500 mA

Base Current I

B

100 mA

Peak Base Current I

BM

200 mA

Power Dissipation at T

amb

=25°C P

tot

330 mW

Operating and Storage Temperature Range T

j:Tstg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off

Current

I

CBO

0.1
5

µA
µA

V

CB

=20V, IE=0

V

CB

=20V, IE=0, T

amb

=150°C

Emitter Cut-Off Current I

EBO

10

µA

V

EB

=5V, IC=0

Collector-Emitter
Saturation Voltage

V

CE(sat)

700 mV IC=500mA, IB=50mA*

Base-Emitter
Saturation Voltage

V

BE(on)

1.2 V IC=500mA, VCE=1V*

Static Forward Current
Transfer Ratio

h

FE

BC81716 100 250 IC=100mA, VCE=1V*
BC81725 160 400 I

C

=100mA, VCE=1V*

BC81740 250 600 I

C

=100mA, VCE=1V*

All bands 40 I

C

=500mA, VCE=1V*

Transition Frequency f

T

200 MHz IC=10mA, VCE=5V

f=35MHz

Output Capacitance C

obo

5.0 pF VCB=10V, f=1MHz

*Measured under pulsed conditions.

BC817

C

B

E

SOT23

TBA