Zetex Semiconductor BBY40 Datasheet

SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE

ISSUE 4 – JANUARY 1998

BBY40

PIN CONFIGURATION

1

1

PARTMARKING DETAIL
BBY40 – S2

3

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Power Dissipation at T
Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Reverse Breakdown
Voltage

Reverse current I

TUNING CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

=25°C P

amb

V

BR

R

28.0 V

amb

tot

j:Tstg

= 25°C unless otherwise stated).

amb

10

1.0

nA
µA

330 mW

-55 to +150 °C

= 10µA

I

R

VR = 28V
V

= 28V, T

R

= 25°C).

amb

= 60°C

2

3

Diode Capacitance C

Capacitance Ratio C

Series Resistance r

d

/ C

d

d

26.0

4.3

5.0 6.5 VR = 3V/25V, f=1MHz

d

32.0

6.0pFpF

0.4 0.6

Spice parameter data is available upon request for this device

VR = 3V, f=1MHz
V

= 25V, f=1MHz

R

Ω

f=200MHz at the value
of V

at which

R

C

=25pF

d

BBY40

Reverse Voltage

Diode Capacitance

10

100

1

0.1 1

10

100

Typical

TYPICAL CHARA CTERISTICS

TYPICAL CHARACTERISTICS