Zetex Semiconductor BBY31 Datasheet
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
BBY31
PIN CONFIGURATION
1
1
PARTMARKING DETAIL
BBY31 – S1
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
Reverse current I
TUNING CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
=25°C P
amb
V
BR
R
28.0 V
amb
tot
j:Tstg
= 25°C unless otherwise stated).
amb
10
1.0
nA
µA
330 mW
-55 to +150 °C
= 10µA
I
R
VR = 28V
V
= 28V, T
R
= 25°C).
amb
= 85°C
2
3
Diode Capacitance C
Capacitance Ratio C
Series Resistance r
d
1.8
/ C
d
d
d
17.5
11.5
2.8
5.0 VR = 3V/25V, f=1MHz
1.2
Spice parameter data is available upon request for this device
pF
pF
pF
Ω
= 1V, f=1MHz
V
R
V
= 3V, f=1MHz
R
V
= 25V, f=1MHz
R
f=470MHz at the value
of V
at which Cd=9pF
R
Loading...