Zetex Semiconductor BAS70-06, BAS70-05, BAS70-04 Datasheet

SOT23 SILICON PLANAR DUAL

1

23

SCHOTTKY BARRIER DIODES

ISSUE 3 - JULY 1995 ✪

1

BAS70-04
BAS70-05
BAS70-06

1

.

1

2

3

32

SERIES PAIR COMMON CATHODE COMMON ANODE

Device Type: BAS70-04 Device Type: BAS70-05 Device Type: BAS70-06

Partmarking Detail: 2Z Partmarking Detail: 2Z5 Partmarking Detail: 1Z

32

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Power Dissipation at T

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

=25°C P

amb

amb

tot

j:Tstg

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Breakdown Voltage V

Reverse Leakage Current I

Forward Voltage V

Forward Current I

Capacitance C

Effective Minority Lifetime
(1)

(1) Sample Test

BR

R

F

F

T

τ

70 V

200

nA

I

R

VR=50V

410 mV IF=1mA

15 mA VF=1V

2.0 pF f=1MHz, VR=0

100 ps f=54MHz, Ipk= 20mA

(Krakauer Test Method)

For typical characteristics graphs see ZC2800E datasheet.

330 mW

-55 to +150 °C

=10µA

3 - 3