Zetex Semiconductor BAS20, BAS21, BAS19 Datasheet

SOT23 SILICON HIGH
SPEED SWITCHING DIODE

ISSUE 2  JANUARY 1995

BAS19
BAS20
BAS21

PIN CONFIGURATION

1

PARTMARKING DETAILS

1

3

BAS19  A8
BAS20  A81

3

BAS21  A82

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL BAS19 BAS20 BAS21 UNIT

Continuous Reverse Voltage V

Repetative Peak Reverse Voltage V

Average Forward Rectified Current I

Forward Current I

Repetative Peak Forward Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature
Range

ELECTRICAL CHARACTERISTICS (at T

R

RRM

F(AV)

F

FRM

tot

T

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Reverse
Breakdown
Voltage

BAS19 120 V

V

(BR)

BAS20 200 V

BAS21 250 V

Reverse Current I

Static Forward Voltage V

Differential Resistance r

Diode Capacitance C

Reverse Recovery Time t

R

rr

diff

F

5

d

100 150 200 V

120 200 250 V

200 mA

200 mA

625 mA

330 mW

-55 to +150 °C

=100µA (1)

I

R

=100µA (1)

I

R

=100µA (2)

I

R

nA

µA

Ω

V

max

R=VR

max, TJ=150°C

V

R=VR

IF=100mA

=200mA

I

F

IF=10mA

100
100

1.00

1.25

5pFf=1MHz

50 ns IF=30mA to IR=30mA

=10Ω measured at I

R

L

=3mA

R

2

(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
Spice parameter data is available upon request for this device

PAGE NO

BAS19
BAS20
BAS21

SWITCHING TIME TEST DATA

Recovery Time Equivalent Test Circuit

Pulse Generator

RS=50

Ω

t

V

90%

p(tot )

10%

t

90%

Input Signal Output Signal

Input Signal

Total Pulse Duration t

Duty Factor

Rise Time of Reverse
Pulse

p

DUT

Reverse Pulse Duration t

p(tot)

δ

t

r

2µs

0.0025

0.6ns

Oscilloscope

Rise Time t

Circuit Capacitance* C <1pF

Sampling Oscilloscope

+I

=50Ω

R

IN

t

rr

F

t

I

R*

100ns

p

0.35ns

r