Zetex Semiconductor 2N7002 Datasheet
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
* 60 Volt V
CEO
2N7002
D
S
PARTMARKING DETAIL – 702
G
ABSOLUTE MAXIMUM RATINGS.
SOT23
PA RAM ETE R SY MBO L VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTER ISTI CS (at T
amb
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
60 V
115 mA
800 mA
± 40
330 mW
-55 to +150 °C
V
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage D rain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Voltage (1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Time (2)(3) t
Turn-Off Time (2)(3) t
BV
V
GS(th)
GSS
I
DSS
D(on)
V
DS(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
(on)
(off)
DSS
60 V
I
=10µA, VGS=0V
D
12.5VID=250mA, VDS= V
10 nA
1
500
V
GS
VDS=48V, VGS=0V
µA
V
µA
DS
500 mA VDS=25V, VGS=10V
3.75
375VmV
7.5
7.5
VGS=10V, ID=500mA
V
GS
VGS=10V, ID=500mA
Ω
V
Ω
GS
80 mS VDS=25V, ID=500mA
50 pF
25 pF VDS=25V, VGS=0V, f=1MHz
5pF
20 ns
20 ns
V
DD
R
=25Ω, RL=150Ω
g
GS
=± 20V, VDS=0V
=48V, VGS=0V, T=125°C(2)
=5V, ID=50mA
=5V, ID=50mA
≈30V, ID=200mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 2
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