Zetex Semiconductor 2N6731 Datasheet

NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 1  MARCH 94

FEATURES
* 80 Volt V
* Gain of 100 at IC = 350 mA
*P

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

=1 Watt

tot

CEO

= 25°C P

amb

CBO

CEO

EBO

CM

C

tot

j:Tstg

2N6731

C
B
E

E-Line

TO92 Compatible

100 V

80 V

5V

2A

1A

1W

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer Ratio

Transition
Frequency

Collector-Base
Capacitance

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

V

CE(sat)

V

BE(on)

h

FE

f

T

C

CB

*Measured under pulsed conditions. Pulse width=300

100 V

=100µA, I

I

C

80 V IC=10mA, IB=0*

5VI

0.1

10

µA

µA

=1mA, IC=0

E

V

=80V, IE=0

CB

V

=5V, IC=0

EB

0.35 V IC=350mA, IB=35mA*

1.0 V IC=350mA, VCE=2V*

100
100 300

IC=10mA, VCE=2V*
I

=350mA, VCE=2V*

C

50 500 MHz IC=200mA, VCE=5V

f=20MHz

20 pF VCB=10V, f=1MHz

µs. Duty cycle ≤2%

3-10

=0

E