Zetex Semiconductor 2N6718, 2N6717, 2N6716 Datasheet
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
2N6716
2N6717
2N6718
FEATURES
* 100 Volt V
CEO
* Gain of 20 at IC = 0.5 Amp
=1 Watt
*P
tot
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL 2N6716 2N6717 2N6718 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
60 80 100 V
60 80 100 V
5V
2A
1A
1W
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL 2N6716 2N6717 2N6718 UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
Ratio
Transition
Frequency
Collector Base
Capacitance
f
T
C
CB
*Measured under pulsed conditions. Pulse width=300
60 80 100 V IC=0.1mA, IE=0
60 80 100 V IC=1mA, IB=0*
555VI
1
1
1
111
0.5
0.35
0.5
0.35
0.5
0.35
=1mA, IC=0
E
V
µA
µA
µA
µA
=60V, IE=0
CB
=80V, IE=0
V
CB
=100V, IE=0
V
CB
V
=5V, IC=0
EB
VIC=250mA, IB=10mA*
I
=250mA,IB=25mA*
C
1.2 1.2 1.2 V IC=250mA, VCE=1V*
80
5020250805020250805020250
IC=50mA, VCE=1V*
=250mA, VCE=1V*
I
C
I
=500mA, VCE=1V*
C
50 500 50 500 50 500 MHz IC=50mA, VCE=10V
30 30 30 pF VCE=10V, f=1MHz
µs. Duty cycle ≤2%
3-6
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