Zetex Semiconductor 2N6520 Datasheet
PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 350 Volt V
* Gain of 15 at IC=-100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Base Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
CEO
= 25°C P
amb
CBO
CEO
EBO
B
C
tot
j:Tstg
-55 to +200 °C
2N6520
C
B
E
E-Line
TO92 Compatible
-350 V
-350 V
-5 V
-250 mA
-500 mA
680 mW
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
*Measured under pulsed conditions. Pulse width=300
-350 V
=-100µA, I
I
C
-350 V IC=-1mA, IB=0*
-5 V
=-10µA, I
I
E
-50 nA VCB=-250V, IE=0
-50 nA VEB=-4V, IC=0
-0.3
-0.35
-0.5
-1.0
-0.80
-0.85
-0.90
V
V
V
V
V
V
V
=-10mA, IB=-1mA*
I
C
=-20mA, IB=-2mA*
I
C
=-30mA, IB=-3mA*
I
C
=-50mA, IB=-5mA*
I
C
I
=-10mA, IB=-1mA*
C
=-20mA, IB=-2mA*
I
C
I
=-30mA, IB=-3mA*
C
-2.0 V IC=-100mA, VCE=-10V*
20
30
30
20
15
200
200
I
=-1mA, VCE=-10V
C
=-10mA, VCE=-10V*
I
C
I
=-30mA, VCE=-10V*
C
=-50mA, VCE=-10V*
I
C
I
=-100mA, VCE=-10V*
C
40 MHz IC=-10mA, VCE=-20V,
f=20MHz
µs. Duty cycle ≤2%
3-4
=0
E
=0
C
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