Zetex (Now Diodes) ZXMHC3A01T8 Schematic [ru]

ZXMHC3A01T8

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE

SUMMARY
N-Channel = V

P-Channel = V

(BR)DSS

(BR)DSS

= 30V : R

= -30V : R

DESCRIPTION

This new generation of trench MOSFETs from Zetex
utilizesauniquestructurethatcombinesthebenefitsof
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

•

Low gate drive

•

Single SM-8 surface mount package

= 0.12 ; ID= 3.1A

DS(on)

= 0.21 ; ID= -2.3A

DS(on)

G

1

D,1D

SM8

S

1

2

S

4

D,3D

G

4

4

APPLICATIONS

•

Single phase DC fan motor drive

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMHC3A01T8TA 7” 12mm 1,000 units
ZXMHC3A01T8TC 13” 12mm 4,000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMH
C3A01

DRAFT ISSUE E - APRIL 2004

G

2

S

2

S

G

3

3

PINOUT

Top View

1

SEMICONDUCTORS

ZXMHC3A01T8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-Channel P-channel UNIT

Drain-source voltage V
Gate-source voltage V
Continuous drain current (V

= 10V; TA=25°C)

GS

(b)(d)

(VGS= 10V; TA=70°C)

(VGS= 10V; TA=25°C)
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T

(c)

=25°C

A

(b)

(c)

(a) (d)

(b)(d)

(a)(d)

I

I
I
I
P

DSS

GS

D

DM
S
SM

D

Linear derating factor
Power dissipation at T

A

=25°C

(b) (d)

P

D

Linear derating factor
Operating and storage temperature range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient
Junction to ambient

NOTES

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300␮S - pulse width limited by maximum junction temperature. Refer

to transient thermal impedance graph.

(d) For device with one active die.

(a) (d)

(b) (d)

R

␪JA

R

␪JA

30 -30 V

±20 ±20 V

3.1

2.5

2.7

-2.3

-1.8

-2.0

14.5 -10.8 A

2.3 -2.2 A

14.5 -10.8 A

1.3

10.4

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

96 °C/W
73 °C/W

A
A
A

W

W

SEMICONDUCTORS

DRAFT ISSUE E - APRIL 2004

2

CHARACTERISTICS

ZXMHC3A01T8

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3

SEMICONDUCTORS

ZXMHC3A01T8

N-channel
ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate-body leakage I
Gate-source threshold voltage V
Static drain-source on-state

resistance
Forward transconductance

DYNAMIC

(1)

(1) (3)

(3)

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

SWITCHING

(2) (3)

Turn-on-delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate drain charge Q

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g
gs
gd

30 V ID= 250␮A, VGS=0V

1.0 ␮AVDS=30V, VGS=0V

100 nA VGS=±20V, VDS=0V

1.0 3.0 V ID= 250␮A, VDS=V

0.12

0.18

⍀

VGS= 10V, ID= 2.5A
V

⍀

= 4.5V, ID= 2.0A

GS

3.5 S VDS=4.5V, ID= 2.5A

190 pF

38 pF
20 pF

= 25V, VGS=0V

V

DS

f=1MHz

1.7 ns
V

2.3 ns

6.6 ns

= 15V, ID=2.5A

DD

R

≅ 6.0Ω ,VGS= 10V

G

2.9 ns

3.9 nC

0.6 nC

0.9 nC

V

= 15V, VGS= 10V

DS

I

= 2.5A

D

SOURCE-DRAIN DIODE

Diode forward voltage

Reverse recovery time
Reverse recovery charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

0.95 V Tj=25°C, IS= 1.7A,
V

GS

17.7 ns

13.0 nC

T

j

di/dt=100A/␮s

=0V

=25°C, IS= 2.5A,

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

4

DRAFT ISSUE E - APRIL 2004