Zetex (Now Diodes) ZUMT860B, ZUMT860C Schematic [ru]
SOT323 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 1 - DECEMBER 1998
ZUMT860B
ZUMT860C
Partmarking Detail: ZUMT860B T2B
ZUMT860C T22
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage
Temperature Range
ELECTRICAL CHARACTERISTICS (at T
C
EM
BM
T
CBO
CES
CEO
EBO
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
CBO
V
CE(sat)
-75 -250 mV IC=-10mA, IB=-0.5mA
-250 -650 mV I
-15
-4
-300 -600 mV I
Base-Emitter
Saturation Voltage
Base-Emitter Voltage V
* Collector-Emitter Saturation Voltage at I
operating point I
C
V
BE(sat)
BE
-580 -650 -750
= 11mA, VCE = 1V at constant base current.
-700
-850
-820
= 10mA for the characteristics going through the
C
-50 V
-50 V
-45 V
-5 V
-100 mA
-200 mA
-200 mA
330 mW
-55 to +150 °C
nA µAVCB = -30V
V
= -30V, T
CB
=-100mA, IB=-5mA
C
=-10mA*
C
mV IC=-10mA ,IB=-0.5mA
I
=-100mA,IB=-5mA
C
mV IC=-2mA, VCE=-5V
I
=-10mA, VCE=-5V
C
amb
=150°C
ZUMT860B
ZUMT860C
TYPICAL CHARACTERISTICS
1.2
+25° C
0.8
0.4
0
1m 1
IC/IB=10
IC/IB=20
IC/IB=50
10m 100m
IC- Collector Current (A)
VCE(sat) v IC
500
+100°C
+25°C
-55°C
250
0
1m 1
10m 100m
IC- Collector Current (A)
hFE v IC
VCE=5V
1.0
VCE=5V
1.2
IC/IB=10
0.8
0.4
0
1m
-55°C
+25°C
+100°C
+150°C
10m 100m 1
IC - Collector Current (A)
VCE(sat) v IC
1.0
IC/IB=10
0.5
0
10m 100m
IC - Collector Current (A)
-55°C
+25°C
+100°C
+150°C
11m
VBE(sat) v IC
1
1
0.5
0
1m 1
10m 100m
IC - Collector Current (A)
-55°C
+25°C
+100°C
VBE(on) v IC
100m
100m
DC
DC
1s
1s
100ms
10m
10m
1m
1m
100m
100ms
10ms
10ms
1ms
1ms
100µs
100us
VCE- Collector Emitter Voltage (V)
1 10 100
Safe Operating Area
Safe Operating Area
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