Zetex (Now Diodes) ZUMT817-25, ZUMT817-40 Schematic [ru]
SOT323 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZUMT817-25
ZUMT817-40
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS ZUMT817-25 - T7
ZUMT817-40 - T23
COMPLEMENTARY TYPES ZUMT817-25 - ZUMT807-25
ZUMT817-40 - ZUMT807-40– T7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Peak Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
BM
tot
j:Tstg
50 V
45 V
5V
1A
500 mA
100 mA
200 mA
330 mW
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward
Current Transfer Ratio
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
100
40
-25 160 400 I
-40 250 600 I
Transition
Frequency
Collector-base
Capacitance
f
T
C
obo
200 MHz IC=10mA, VCE=5V
5.0 pF IE=Ie=0, VCB=10V
*Measured under pulsed conditions. Pulse width=300
0.1
A
5
A
10
A
700 mV IC=500mA, IB=50mA*
1.2 V IC=500mA, VCE=1V*
600 IC=100mA, VCE=1V*
s. Duty cycle 2%
=20V, IE=0
V
CB
V
=20V, IE=0, T
CB
V
=5V, IC=0
EB
I
=500mA, VCE=1V*
C
=100mA, VCE=1V*
C
=100mA, VCE=1V*
C
f=35MHz
f=1MHz
amb
=150°C
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