Zetex (Now Diodes) FMMT5209, FMMT5210 Schematic [ru]
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JULY 1995 ✪
PARTMARKING DETAILS:
FMMT5209 - 2Q
FMMT5210 - 2R
FMMT5209
FMMT5210
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL FMMT5209 FMMT5210 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
FMMT5209 FMMT5210
PARAMETER SYMBOL
Collector-Base
Cut-Off Current
Emitter-Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter ON
Voltage
Static Forward
Current Transfer
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
Ratio
MIN. MAX. MIN. MAX.
50 50
50 50 nA VEB=3V, IC=0
700 700 mV IC=10mA, IB=1mA
850 850 mV IC=1mA, VCE=5V
100 300 200 600
150 250 I
150 250 I
Transition Frequency f
Small Signal Current
Transfer Ratio
T
h
fe
30 30 MHz IC=0.5mA, VCE=5V,
150 600 250 900 MHz IC=1mA, VCE=5V, f=1KHz
Noise Figure N 3 2 dB
43dB
Output Capacitance C
obo
44pFV
50 V
50 V
4.5 V
50 mA
330 mW
-55 TO +150 °C
CONDITIONS.
UNIT
VCB=35V, IE=0
nA
=100µA, V
I
C
=1mA, VCE=5V
C
=10mA, VCE=5V*
C
=5V
CE
f=20MHz
=200µA, V
I
C
f=30Hz to 15KHz at -3dB
=5V, R
CE
points
=200µA, V
I
C
f=1KHz to
=5V, IE=0, f=140KHz
CB
=5V, R
CE
∆f=200Hz
=2KΩ,
g
=2KΩ,
g
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