Zetex (Now Diodes) FMMT4402, FMMT4403 Schematic [ru]
SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 2 - MARCH 1995 ✪
FMMT4402
FMMT4403
PARTMARKING DETAILS: FMMT4402 - 2K
FMMT4403 - 2L
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
FMMT4402 FMMT4403
PARAMETER SYMBOL
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Current
Collector-Emitter
Cut-Off Current
Base Cut-Off
Current
Static Forward
Current
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BEX
h
FE
TransferRatio
MIN. MAX. MIN. MAX.
-40 -40 V IC=-1mA, IB=0
-40 -40 V IC=-0.1mA, IE=0
-5 -5 V IE=-0.1 mA, IC=0
-0.1 -0.1
-0.1 -0.1
30
50
5020150
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance C
Input Capacitance C
V
CE(sat)
V
BE(sat)
f
T
obo
ibo
-0.75 -0.95
-0.4
-0.75
-1.3
150 200 MHz IC=-20mA,VCE=-10V
8.5 8.5 pF VCB=-10 V,IE=0
30 30 pF VBE=0.5V
*Measured under pulsed conditions. Pulse width=300
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C unless otherwise stated)
30
60
100
100
20
-0.75 -0.95
µs. Duty cycle ≤ 2%
300
-0.4
-0.75VV
-1.3VV
-40 V
-40 V
-5 V
-600 A
330 mW
-55 to +150 °C
CONDITIONS
UNIT
=-35V
V
µA
CE
=-0.4V
V
EB(off)
V
=-35V
µA
CE
V
=-0.4V
EB(off)
I
=-0.1mA, VCE=-1V
C
I
=-1mA, VCE=-1V
C
=-10mA, VCE=-1V
I
C
I
=-150mA,VCE=-2V*
C
=-500mA,VCE=-2V*
I
C
IC=-150mA,IB=-15mA*
=-500mA,IB=-50mA*
I
C
IC=-150mA,IB=-15mA*
I
=-500mA,IB=-50mA
C
f=100MHz
f=100kHz
=0, f=100kHz
I
C
E
B
PAGE NUMBER
FMMT4402
FMMT4403
SWITCHING CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS
Turn-On Time t
Turn-Off Time t
on
off
amb
= 25°C )
35 ns VCC=-30V, V
255 ns VCC=-30V, IC=-150mA
=-150mA, IB1=-15mA
I
C
(See Fig.1)
I
=-15mA
B1=IB2
(See Fig. 2)
BE(off )
=-2V
PAGE NUMBER
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