Zetex (Now Diodes) FMMT2222, FMMT2222A, FMMT2222AR, FMMT2222R Schematic [ru]

SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS

FMMT2222

FMMT2222A

ISSUE 3  FEBRUARY 1996

FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222  1BZ FMMT2222A  1P

C

FMMT2222R  2P FMMT2222AR  3P
COMPLEMENTARY TYPES

B

FMMT2222  FMMT2907
FMMT2222A  FMMT2907A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

CBO

CEO

EBO

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

60 75 V

30 40 V IC=10mA, IB=0

56V

10

10

Emitter Cut-Off
Current

Collector-Emitter
Cut-Off Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Static Forward
Current Transfer

I

EBO

I

CEX

V

CE(sat)

V

BE(sat)

h

FE

Ratio

*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device

10 10 nA VEB=3V, IC=0

10 10 nA VCE=60V, V

0.3

1.0

0.6 2.0

0.6 1.2

2.6

300

35
50
75
35
100
50
40

µs. Duty cycle ≤ 2%

35
50
75
35
100
50
30

60 75 V

30 40 V

56V

600 mA

330 mW

-55 to +150 °C

10

10

0.3

1.0VV

=10µA, I

I

C

=10µA, I

I

E

V

nA

µA

nA

µA

CB

V

CB

V

CB

V

CB

IC=150mA, IB=15mA*

=500mA, IB=50mA*

I

C

=0

E

=0

C

=50V, IE=0
=60V, IE=0
=50V, IE=0, T
=60V, IE=0, T

EB(off)

amb
amb

=3V

=150°C
=150°C

IC=150mA, IB=15mA*

2.0VV

300

I

=500mA, IB=50mA*

C

I

=0.1mA, VCE=10V*

C

=1mA, VCE=10V

I

C

I

=10mA, VCE=10V*

C

=10mA, VCE=10V, T

I

C

=150mA, VCE=10V*

I

C

=150mA, VCE=1V*

I

C

I

=500mA, VCE=10V*

C

amb

=-55°C

E

FMMT2222

FMMT2222A

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Transition
Frequency

Output Capacitance C

Input Capacitance C

Delay Time t
Rise Time t

Storage Time t
Fall Time t

f

T

obo

ibo

d

r

s

f

250 300 MHz IC=20mA, VCE=20V

f=100MHz

88pFV

=10V, IE=0,

CB

f=140KHz

30 25 pF VEB=0.5V, IC=0

f=140KHz

10 10 ns VCC=30V, V

=150mA, IB1=15mA

25 25 ns

I

C

(See Delay Test Circuit)

225 225 ns VCC=30V, IC=150mA

= IB2=15mA

60 60 ns

I

B1

(See Storage Test
Circuit)

DELAY AND RISE  TEST CIRCUIT

+30V

Generator rise time <2ns

0.5V

)<200ns

1

619

Ω

200

Ω

Scope:
R

> 100 k

in

Ω

Cin< 12 pF
Rise Time < 5 ns

Pulse width (t
Duty cycle = 2%

9.9V

0

BE(off)

=0.5V

STORAGE TIME AND FALL TIME  TEST CIRCUIT

µs

=100

+16.2 V

0

-13.8 V

<5ns

Duty cycle = 2%

=500

Ω

1K

1N916

µ

s

+30V

Ω

200

Scope:

> 100 k

R
C

-3V

Rise Time < 5 ns

in

< 12 pF

in

Ω