Zetex ZXTS1000E6TA, ZXTS1000E6TC Datasheet
ZXTS1000E6
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
AND SCHOTTKY DIODE
SUMMARY
Transistor: V
Schottky Diode: V
DESCRIPTION
A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded
SOT23 package.
FEATURES
Low Saturation Transistor
•
High Gain - 300 minimum
•
Low V
•
APPLICATIONS
• Mobile telecomms, PCMCIA & SCSI
• DC-DC Conversion
ORDERING INFORMATION
DEVICE REEL SIZE
=-12V, IC= -1.25A
CEO
, fast switching Schottky
F
=40V; IC= 0.5A
R
(inches)
TAPE WIDTH
(mm)
SOT23-6
QUANTITY
PER REEL
ZXTS1000E6TA 7 8mm embossed 3000 units
ZXTS1000E6TC 13
DEVICE MARKING
1000
ISSUE 1 - NOVEMBER 2000
8mm embossed
10000 units
1
Top View
ZXTS1000E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Transistor
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Schottky Diode
Continuous Reverse Voltage V
Forward Current I
Non Repetitive Forward Current t≤100µs
t≤ 10ms
Package
Power Dissipation at T
single die “on”
amb
=25°C
both die “on”
Storage Temperature Range T
Junction Temperature T
C
F
I
FSM
P
CBO
CEO
EBO
R
D
stg
j
-12 V
-12 V
-5 V
-1.25
40 V
0.5 A
6.75
3
0.725
0.885
-55 to +150 °C
125 °C
A
A
A
W
W
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
single die “on”
both die “on”
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
R
θJA
R
θJA
138
113
°C/W
°C/W
ISSUE 1 - NOVEMBER 2000
2
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