ZETEX ZXTP2013G Technical data

ZXTP2013G

100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN
SOT223

SUMMARY

= -100V : R

BV

CEO

DESCRIPTION

Packaged in the SOT223 outline this new low saturation 100V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.

FEATURES

5 amps continuous current

•

Up to 10 amps peak current

•

Very low saturation voltages

•

APPLICATIONS

•

Motor driving

= 60m ; IC= -5A

SAT

O

S

3

2

2

T

•

Line switching

•

High side switches

•

Subscriber line interface cards (SLIC)

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXTP2013GTA 7” 12mm
ZXTP2013GTC 13” 4,000 units

TAPE

WIDTH

embossed

QUANTITY PER

REEL

1,000 units

DEVICE MARKING

ZXTP
2013

ISSUE 1 - JUNE 2005

PINOUT

TOP VIEW

1

SEMICONDUCTORS

ZXTP2013G

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current

(a)

Peak pulse current I

(a)

Power dissipation at T

=25°C

A

CBO
CEO
EBO

I

C
CM

P

D

Linear derating factor
Power dissipation at T

=25°C

A

(b)

P

D

Linear derating factor
Operating and storage temperature range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient

NOTES

(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(a)

R

⍜JA

-140 V

-100 V

-7 V

-5 A

-10 A

3.0
24

mW/°C

1.6

12.8

mW/°C

-55 to +150 °C

42 °C/W

W

W

SEMICONDUCTORS

ISSUE 1 - JUNE 2005

2