ZETEX ZXTDA1M832 Technical data

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MPPS™ Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION

SUMMARY NPN Transistor

PNP Transistor

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package), these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions.

Users will also gain several other key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

PCB area and device placement savings

Lower package height (0.9mm nom)

Reduced component count

CEO

= 15V; R

= -12V; R

= 45m ;C= 4.5A

SAT

= 60m ;C= -4A

SAT

ZXTDA1M832

3mm x 2mm Dual Die MLP

FEATURES

•

Low Equivalent On Resistance

•

Extremely Low Saturation Voltage (100mV max @1A--NPN)

•

HFEspecified up to 12A

•

IC= 4.5A Continuous Collector Current

•

3mm x 2mm MLP

APPLICATIONS

•

DC - DC Converters

•

Charging circuits

•

Power switches

•

Motor control

•

LED Backlighting circuits

ORDERING INFORMATION

DEVICE REEL TAPE

ZXTDA1M832TA 7

ZXTDA1M832TC 13ⴕ

WIDTH

ⴕⴕ 8mm 3000

ⴕ 8mm 10000

QUANTITY

PER REEL

DEVICE MARKING

DA1

ISSUE 1 - JUNE 2002

PINOUT

3mm x 2mm Dual MLP

underside view

ZXTDA1M832

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL NPN PNP UNIT

Collector-Base Voltage V Collector-Emitter Voltage V Emitter-Base Voltage V Peak Pulse Current I Continuous Collector Current (a)(f) I Continuous Collector Current (b)(f) I Base Current I Power Dissipation at TA=25°C (a)(f)

Linear Derating Factor Power Dissipation at TA=25°C (b)(f)

Linear Derating Factor Power Dissipation at TA=25°C (c)(f)

Linear Derating Factor Power Dissipation at TA=25°C (d)(f)

Linear Derating Factor Power Dissipation at TA=25°C (d)(g)

Linear Derating Factor Power Dissipation at TA=25°C (e)(g)

Linear Derating Factor Storage Temperature Range T Junction Temperature T

CBO

CEO

EBO

stg

40 -20 V 15 -12 V

7.5 -7.5 V 15 -12 A

4.5 -4 A

5 -4.4 A

1000 mA

1.5 12

2.45

19.6 1

1.13 8

1.7

13.6 3

mW/°C

-55 to +150 °C 150 °C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(f) R Junction to Ambient (b)(f) R Junction to Ambient (c)(f) R Junction to Ambient (d)(f) R Junction to Ambient (d)(g) R Junction to Ambient (e)(g) R

Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The

copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed

pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached

attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached

attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the

package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.

θJA

83.3 °C/W 51 °C/W

125 °C/W 111 °C/W

73.5 °C/W

41.7 °C/W

ISSUE 1 - JUNE 2002

ZXTDA1M832

TYPICAL CHARACTERISTICS

CE(SAT)

Limited

CE(SAT)

Limited

Col lector Current (A) I

0.1

0.01

Note (a)(f)

Singl e Pulse, T

100ms

amb

=25°C

10ms

1ms

100us

0.1 1 10

VCECollector-Emitter Voltage (V)

NPN Safe Operating Area

Note (a)(f)

D=0. 5

D=0. 2

Thermal Resistance (°C/W)

100µ 1m 10m 100m 1 10 100 1k

Singl e Pulse

D=0.05

D=0. 1

Pulse Widt h (s)

Transient Thermal Impedance

3.5

=25°C

amb

3.0

2.5

2.0

=150°C

jmax

Continuous

2oz copper Note (f)

1.5

1.0

Dissipation (W)

0.5

0.0

0.1 1 10 100

BoardCuArea(sqcm)

2oz copper Note (g)

1oz copper Note (f)

1oz copper Note (g)

Power Dissipation v Board Area

Col lect or Current (A) I

0.1

0.01

Note (a)(f)

Singl e Pulse, T

100ms

amb

=25°C

10ms

1ms

100us

0.1 1 10

VCECollector-Emitter Voltage (V)

PNP Safe Operating Area

3.5

3.0

2oz Cu Note (e)(g)

2.5

2.0

1.5

1.0

1oz Cu

0.5

Note (d)(f)

0.0 0 25 50 75 100 125 150

Max Power Dissipation (W)

Temperature (°C)

2oz Cu Note (a)(f)

=25°C

amb

1oz Cu Note (d)(g)

Derating Curve

225 200 175 150

1oz copper Note (f)

1oz copper Note (g)

125 100

2oz copper

Note (f)

Thermal Resistance (°C/W)

0.1 1 10 100

2oz copper Note (g)

BoardCuArea(sqcm)

Thermal Resistance v Board Area

ISSUE 1 - JUNE 2002

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