Zetex ZXTD09N50DE6TA, ZXTD09N50DE6TC Datasheet

ZXTD09N50DE6E6

SuperSOT
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY
V

=50V; R

CEO

DESCRIPTION

A dual NPN low saturation transistor combination contained in a single 6 lead
SOT23 package. Each transistor is the equivalent to the ZUMT619 device.

= 160m ;IC= 1A

SAT

FEATURES

Low Equivalent On Resistance

•

Low Saturation Voltage

•

I

=1A Continuous Collector Current

•

C

SOT23-6 package

•

APPLICATIONS

• LCD Backlighting inverter circuits

• Boost functions in DC-DC converters

•

ORDERING INFORMATION

DEVICE REEL SIZE

ZXTD09N50DE6TA

ZXTD09N50DE6TC

DEVICE MARKING

D619

(inches)

7 8mm embossed 3000 units

13 8mm embossed 10000 units

TAPE WIDTH
(mm)

B1

QUANTITY
PER REEL

C1

E1

SOT23-6

B2

C1

E1
C2

Top View

C2

E2

B1

E2
B2

ISSUE 2 - JUNE 2001

1

ZXTD09N50DE6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor

Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor

Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

P

D

j:Tstg

50 V

50 V

5V

2A

1.0 A

200 mA

0.90

7.2

mW/°C

1.1

8.8

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

W

W

W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

θJA

θJA

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

2

139 °C/W

73 °C/W

113 °C/W

ISSUE 2 - JUNE 2001

ZXTD09N50DE6E6

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer
Ratio

Transition
Frequency

Output Capacitance C

Turn-On Time t

Turn-Off Time t

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

obo

(on)

(off)

50 V

I

= 100µA

C

50 V IC= 10mA*

5V

I

= 100µA

E

10 nA VCB= 40V

10 nA VEB=4V

24
60
120
160

10 nA V

35
80
200
270

mV
mV
mV
mV

= 40V

CES

= 100mA, IB= 10mA*

I

C

= 250mA, IB= 10mA*

I

C

= 500mA, IB= 10mA*

I

C

= 1A, IB= 50mA*

I

C

940 1100 mV IC= 1A, IB= 50mA*

850 1100 mV IC= 1A, VCE=2V*

200
300
200
75
20

420
450
350
130
60

=10mA, VCE=2V*

I

C

= 100mA, VCE=2 V*

I

C

= 500mA, VCE=2V*

I

C

= 1A, VCE=2V*

I

C

= 1.5A, VCE=2 V*

I

C

215 MHz IC= 50mA, VCE=10V

f= 100MHz

10 pF VCB= 10V, f=1MHz

150 ns VCC=10V,IC=1A

=100mA

I

425 ns

B1=IB2

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 2 - JUNE 2001

3